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Spiro-MeOTAD Sale

(Synonyms: 2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴) 目录号 : GC44942

A hole-transport material

Spiro-MeOTAD Chemical Structure

Cas No.:207739-72-8

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1mg
¥428.00
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5mg
¥1,610.00
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10mg
¥2,793.00
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50mg
¥10,707.00
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产品描述

Spiro-MeOTAD is a stable and efficient hole-transport material in organic light-emitting devices and in solid-state dye-sensitized solar cells (ssDSSCs). It yields higher ssDSSC efficiency compared to the liquid electrolyte for DSSC solar cells due to its reasonable charge carrier mobility and its amorphous nature and high solubility, which enables excellent infiltration into mesoporous titania films. Neutral spiro-MeOTAD absorbs light in the UV region of the spectrum, while its oxidized forms exhibit strong absorptions throughout the visible and near-infrared ranges.

Chemical Properties

Cas No. 207739-72-8 SDF
别名 2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴
Canonical SMILES COC(C=C1)=CC=C1N(C2=CC=C(OC)C=C2)C(C=C3)=CC4=C3C(C=CC(N(C5=CC=C(OC)C=C5)C6=CC=C(OC)C=C6)=C7)=C7C48C(C=C(N(C9=CC=C(OC)C=C9)C%10=CC=C(OC)C=C%10)C=C%11)=C%11C%12=C8C=C(N(C%13=CC=C(OC)C=C%13)C%14=CC=C(OC)C=C%14)C=C%12
分子式 C81H68N4O8 分子量 1225.4
溶解度 DMF: 10 mg/ml 储存条件 Store at -20°C
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1 mg 5 mg 10 mg
1 mM 0.8161 mL 4.0803 mL 8.1606 mL
5 mM 0.1632 mL 0.8161 mL 1.6321 mL
10 mM 0.0816 mL 0.408 mL 0.8161 mL
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Research Update

Challenges for Thermally Stable Spiro-MeOTAD toward the Market Entry of Highly Efficient Perovskite Solar Cells

ACS Appl Mater Interfaces 2022 Aug 3;14(30):34220-34227.PMID:35076216DOI:10.1021/acsami.1c21852.

Perovskite solar cells (PSCs) have drawn great attention because they have seen a dramatic increase in power conversion efficiency (PCE) over only a decade and reached 25.5% of certified PCE in 2021. The efficiency competitiveness with a low production cost puts up PSCs as a candidate for next-generation photovoltaics, encouraging the stability assessment. Research on PSCs, however, still struggles with the stability issue, particularly at elevated temperature, which is mainly ascribed to the use of Spiro-MeOTAD as a hole transport material (HTM). Though many attempts have been made to explore a new HTM to replace Spiro-MeOTAD, the improved stability is mostly obtained at the expense of losing efficiency. Likewise, the question of the effectiveness of alternatives for Spiro-MeOTAD consistently remains. In this perspective, the morphological stability of Spiro-MeOTAD at elevated temperatures is discussed to determine the underlying origins of the thermal stability issue and find feasible strategies to resolve it.

Morphology Control of Doped Spiro-MeOTAD Films for Air Stable Perovskite Solar Cells

Small 2020 May;16(18):e1907513.PMID:32307895DOI:10.1002/smll.201907513.

Doped 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-MeOTAD), which acts as a hole-transporting layer (HTL), endows perovskite solar cells (PSCs) with excellent performance. However, the intrinsically hygroscopic nature of lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) dopants also aggravates the moisture instability of PSCs. In this work, the origins of the moisture instability of Spiro-MeOTAD HTLs are explored and strategies to enhance moisture resistance are proposed. After 780 h of aging in air, 52% of the initial power conversion efficiency (PCE) can be sustained by prolonging the mixing time of the precursor solution of Spiro-MeOTAD to reduce accumulated LiTFSI. In contrast, only 7% of the initial PCE remains if the precursor solution is mixed briefly. By thermally annealing an HTL to evaporate residual tBP in Spiro-MeOTAD, pinholes are completely eliminated and 65% of the initial PCE remains after the same aging time. In this study, the significance of the initial morphology of Spiro-MeOTAD HTLs on device stability is analyzed and strategies based on physical morphology for controlling PSC moisture instability induced by HTL dopants are developed.

A Spiro-MeOTAD/Ga2O3/Si p-i-n Junction Featuring Enhanced Self-Powered Solar-Blind Sensing via Balancing Absorption of Photons and Separation of Photogenerated Carriers

ACS Appl Mater Interfaces 2021 Dec 8;13(48):57619-57628.PMID:34806380DOI:10.1021/acsami.1c18229.

Solar blind ultraviolet (SBUV) self-powered photodetectors (PDs) have a great number of applications in civil and military exploration. Ga2O3 is a prospective candidate for SBUV detection owing to its reasonable bandgap corresponding to the SBUV waveband. Nevertheless, the previously reported Ga2O3 photovoltaic devices had low photoresponse performance and were still far from the demands of practical application. Herein, we propose an idea of using Spiro-MeOTAD (spiro) as the SBUV transparent conductive layer to construct p-i-n PDs (p-spiro/Ga2O3/n-Si). With the aid of double built-in electric fields, the designed p-i-n PDs could operate without any external power source. Furtherly, the influence of spiro thickness on improving the photoelectric performance of devices is investigated in detail and the optimum device is achieved, translating to a peak responsivity of 192 mA/W upon a weak 254 nm light illumination of 2 μW/cm2 at zero bias. In addition, the I-t curve of our PD shows binary response characteristics and a four-stage current response behavior under a small forward bias, and also, its underlying working mechanism is analyzed. In sum, this newly developed device presents great potential for booming the high energy-efficient optoelectronic devices in the short run.

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect

ACS Appl Mater Interfaces 2016 Mar 9;8(9):6137-43.PMID:26872101DOI:10.1021/acsami.5b12870.

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

Oxygen-induced doping of Spiro-MeOTAD in solid-state dye-sensitized solar cells and its impact on device performance

Nano Lett 2012 Sep 12;12(9):4925-31.PMID:22913390DOI:10.1021/nl302509q.

Solid state dye-sensitized solar cells (sDSCs) employing the hole conductor 2,2'7,7'-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene (Spiro-MeOTAD) require the presence of oxygen during fabrication and storage. In this paper, we determine the concentrations of oxidized Spiro-MeOTAD within devices under different operating and storage conditions by UV-vis spectroscopy. Relative concentrations of Spiro-MeOTAD(+) were found to be greater than 10% after illumination for standard sDSCs, where no chemical dopant had been used in the solar cell fabrication but oxygen and lithium ions were present. We suggest that oxidized Spiro-MeOTAD is created as a byproduct of oxygen reduction at the TiO(2) surface during cell illumination. Furthermore, we studied the effect of light soaking under different conditions and associated changes in Spiro-MeOTAD(+) concentration on the solar cell measurements. Our findings give insights to photochemical reactions occurring within sDSCs and provide guidelines for which doping levels should be used in device fabrication in absence of oxygen.